FDD6680 FDD6680, rev.b FDD6680 n-channel logic level pwm optimized powertrench? mosfet general description this n-channel logic level mosfet has been designed specifically to improve the overall efficiency of dc/dc converters using either synchronous or conventional switching pwm controllers. the mosfet features faster switching and lower gate charge than other mosfets with comparable r ds(on) specifications. the result is a mosfet that is easier to drive, even at very high frequencies, and dc/dc power supply designs with higher overall efficiency. applications ? dc/dc converter motor drives july 1999 features 55 a, 30 v. r ds(on) = 0.010 ? @ v gs = 10 v r ds(on) = 0.015 ? @ v gs = 4.5 v. optimized for use in high frequency dc/dc converters. low gate charge (19nc typical). very fast switching. ? 1999 fairchild semiconductor corporation g s d to-252 s d g absolute maximum ratings t c =25 o c unless otherwise noted symbol parameter ratings units v dss drain-source voltage 30 v v gss gate-source voltage 20 v i d maximum drain current -continuous (note 1) 55 (note 1a) 14 maximum drain current -pulsed 100 a maximum power dissipation @ t c = 25 o c (note 1) 60 t a = 25 o c (note 1a) 3.2 p d t a = 25 o c (note 1b) 1.3 w t j , t stg operating and storage junction temperature range -55 to +150 c thermal characteristics r jc thermal resistance, junction-to- case (note 1) 2.1 c/w r ja thermal resistance, junction-to- ambient (note 1a) 40 c/w (note 1b) 96 c/w package marking and ordering information device marking device reel size tape width quantity FDD6680 FDD6680 13 ?? 16mm 2500
FDD6680 FDD6680, rev.b electrical characteristics t a = 25 c unless otherwise noted symbol parameter test conditions min typ max units drain-source avalanche ratings (note 2) w dss single pulse drain-source avalanche energy v dd = 15 v, i l = 55 a 170 mj i ar maximum drain-source avalanche current 55 a off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 30 v ? bv dss ? t j breakdown voltage temperature coefficient i d = 250 a,referenced to 25 c 18 mv/ c i dss zero gate voltage drain current v ds = 24 v, v gs = 0 v 1 a i gssf gate-body leakage current, forward v gs = 20v, v ds = 0 v 100 na i gssr gate-body leakage current, reverse v gs = -20 v, v ds = 0 v -100 na on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 12 3 v ? v gs(th) ? t j gate threshold voltage temperature coefficient i d =250 a,referenced to 25 c -5.5 mv/ c r ds(on) static drain-source on-resistance v gs = 10v, i d = 14a v gs = 10v, i d = 14a, t j =125 c v gs = 4.5v, i d = 12 a 0.008 0.013 0.012 0.010 0.017 0.015 ? i d(on) on-state drain current v gs = 10 v, v ds = 5 v 50 a g fs forward transconductance v ds = 5 v, i d = 14 a 38 s dynamic characteristics c iss input capacitance 2070 pf c oss output capacitance 510 pf c rss reverse transfer capacitance v ds = 15 v, v gs = 0 v, f = 1.0 mhz 235 pf switching characteristics (note 2) t d(on) turn-on delay time 15 28 ns t r turn-on rise time 18 33 ns t d(off) turn-off delay time 40 64 ns t f turn-off fall time v dd = 15 v, i d = 1 a, v gs = 10 v, r gen = 6 ? 18 33 ns q g total gate charge 19 27 nc q gs gate-source charge 7 nc q gd gate-drain charge v ds = 15 v, i d = 14a, v gs = 5v, 6nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current 2.3 a v sd drain-source diode forwardvoltage v gs = 0 v, i s = 2.3 a (note 2) 0.75 1.2 v notes: 1. r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the dr ain tab. r jc is guaranteed by design while r ca is determined by the user's board design. scale 1 : 1 on letter size paper 2. pulse test: pulse width 300 s, duty cycle 2.0% a) r ja = 40 o c/w when mounted on a 1in 2 pad of 2oz copper. b) r ja = 96 o c/w on a minimum mounting pad.
FDD6680 FDD6680, rev.b typical characteristics figure 1. on-region characteristics. figure 2. on-resistance variation with drain current and gate voltage. figure 3. on-resistance variation with temperature. figure 4. on-resistance variation with gate-to-source voltage. figure 5. transfer characteristics. figure 6. body diode forward voltage variation with source current and temperature. 0 10 20 30 40 50 60 012345 v ds , drain-source voltage (v) i d , drain-source current (a) v gs = 10v 4.5v 3.5v 4.0v 5v 0.8 1 1.2 1.4 1.6 1.8 2 2.2 0 102030405060 i d , drain current (a) r ds(on) , normalized drain-source on-resistance v gs = 4.0v 10v 5.0v 4.5v 6.0v 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistance i d = 14a v gs = 10v 0 0.01 0.02 0.03 0.04 246810 v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) i d = 7a t a = 125 o c t a = 25 o c 0 10 20 30 40 50 60 12345 v gs , gate to source voltage (v) i d , drain current (a) t a = -55 o c 25 o c 125 o c v ds =5v 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 v sd , body diode voltage (v) i s , reverse drain current (a) t j =125 o c 25 o c - 55 o c v gs =0
FDD6680 FDD6680, rev.b typical characteristics (continued) figure 7. gate-charge characteristics. figure 8. capacitance characteristics. figure 9. maximum safe operating area. figure 10. single pulse maximum power dissipation. figure 11. transient thermal response curve. thermal characterization performed using the conditions described in note 1b. transient themal response will change depending on the circuit board design. 0 20 40 60 0.01 0.1 1 10 100 1000 single pulse time (sec) power (w) single pulse r ja = 96 o c/w t a = 25 o c 0.0001 0.001 0.01 0.1 1 10 100 300 0.0001 0.001 0.01 0.1 1 t , time (sec) transient thermal resistance 1 sin g le pulse d = 0.5 0.1 0.05 0.02 0.01 0.2 r(t), normalized effective duty cycle, d = t / t 1 2 r (t) = r(t) * r r = 96 c/w ja ja ja t - t = p * r (t) ja a j p(pk) t 1 t 2 0 2 4 6 8 10 0 10203040 q g , gate charge (nc) v gs , gate-source voltage (v) i d = 14a v ds = 5v 10v 15v 0 500 1000 1500 2000 2500 0 5 10 15 20 25 30 v ds , drain to source voltage (v) capacitance (pf) c iss c oss c rss f = 1 mhz v gs = 0 v 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-source voltage (v) i d , drain current (a) r ds(on) limit v gs = 10v single pulse r ja = 96 o c/w t a = 25 o c dc 10s 1s 100ms 10ms 1ms 100
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